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| PD- 91789 PRELIMINARY IRF7324D1 8 FETKYTM MOSFET / Schottky Diode l l l l Co-packaged HEXFET(R) Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint A A S G 1 K K D D 2 7 VDSS = -20V RDS(on) = 0.18 Schottky Vf = 0.39V 3 6 4 5 T op V ie w Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. S O -8 Absolute Maximum Ratings (TA = 25C unless otherwise noted) Parameter ID @ TA = 25C ID @ TA = 70C I DM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS@4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Maximum -2.9 -2.3 -23 2.0 1.3 16 12 -5.0 -55 to +150 Units A W mW/C V V/ns C Thermal Resistance Ratings Parameter RJA Junction-to-Ambient Maximum 62.5 Units C/W Notes: Repetitive rating; pulse width limited by maximum junction temperature (see figure 11) ISD -2.2A, di/dt -50A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2% Surface mounted on FR-4 board, t 10sec. www.irf.com 1 IRF7324D1 MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -20 -- -- -0.70 4.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- 0.070 0.115 -- -- -- -- -- -- 15 2.2 6.0 8.4 26 51 33 610 310 170 Max. Units Conditions -- V VGS = 0V, ID = -250A 0.180 VGS = -4.5V, ID = -2.9A 0.375 VGS = -2.7V, ID = -2.5A -- V VDS = VGS, ID = -250A -- S VDS = -16V, ID = -2.2A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 125C -100 VGS = -12V nA 100 VGS = 12V 22 ID = -2.2A 3.3 nC VDS = -16V 9.0 VGS = -4.5V (see figure 10) -- VDD = -10V -- ID = -2.2A ns -- RG = 6.0 -- RD = 4.5 -- VGS = 0V -- pF VDS = -15V -- = 1.0MHz (see figure 9) Conditions MOSFET Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) -- -- -2.0 A I SM Pulsed Source Current (Body Diode) -- -- -23 VSD Body Diode Forward Voltage -- -- -1.2 V trr Reverse Recovery Time (Body Diode) -- 43 65 ns Q rr Reverse Recovery Charge -- 44 66 nC TJ = 25C, IS = -2.0A, VGS = 0V TJ = 25C, IF = -2.3A di/dt = 100A/s Schottky Diode Maximum Ratings IF(av) I SM Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Max. Units. 1.7 A 1.2 120 11 A Conditions 50% Duty Cycle. Rectangular Wave, TA = 25C TA = 70C 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with VRRM applied Schottky Diode Electrical Specifications V FM Parameter Max. Forward voltage drop Max. Units 0.50 0.62 V 0.39 0.57 0.05 mA 10 92 pF 3600 V/ s Conditions IF = 1.0A, TJ = 25C IF = 2.0A, TJ = 25C IF = 1.0A, TJ = 125C IF = 2.0A, TJ = 125C . VR = 20V TJ = 25C TJ = 125C VR = 5Vdc ( 100kHz to 1 MHz) 25C Rated VR IRM Ct dv/dt Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge 2 www.irf.com IRF7324D1 Power Mosfet Characteristics 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP 100 -I D , D rain-to-S ourc e C urrent (A ) 10 -ID , D rain-to-S ourc e C urrent (A ) VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP 10 1 1 -1.5V -1.5V 20 s P U LS E W ID TH TJ = 25C A 0.1 1 10 100 0.1 0.01 0.1 0.01 20 s P U LS E W ID TH TJ = 150C 0.1 1 10 100 A -V D S , D rain-to-S ource V oltage (V ) -VD S , D rain-to-S ource V oltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 -I D , D rain -to -S ou rc e C u rre n t (A ) TJ = 2 5 C 10 TJ = 1 5 0 C -I S D , R evers e D rain C urrent (A ) 10 TJ = 150C T J = 25C 1 1 0.1 1.5 2.0 2.5 3.0 V D S = -1 5 V 2 0 s P U L S E W ID T H 3.5 4.0 4.5 5.0 A 0.1 0.3 0.6 0.9 1.2 V G S = 0V A 1.5 -VG S , G a te -to -S o u rc e V o lta g e (V ) -V S D , S ource-to-D rain V oltage (V ) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7324D1 Power Mosfet Characteristics R D S (o n) , D rain-to-S ource O n R es istance (N orm alized) I D = -3.6 A RDS (on) , Drain-to-Source On Resistance () 2.0 0.10 0.09 1.5 V G S = -5.0V 0.08 1.0 0.07 0.5 0.06 0.0 -60 -40 -20 0 20 40 60 80 V G S = -4.5V 100 120 140 160 A 0.05 0 1 2 3 A T J , Junction T em perature (C ) -I D , D rain C urrent (A ) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current 0.14 100 RDS (on) , Drain-to-Source On Resistance () O P E R A TIO N IN TH IS A R E A LIM ITE D B Y R D S (on) 0.12 -I D , D rain C urrent (A ) 10 100 s 0.10 I D = -2.9A 0.08 1m s 1 10m s 0.06 0.04 2 4 6 8 A 0.1 1 T A = 25C T J = 100C S ingle P ulse 10 100 A -VG S , G ate-to-S ource V oltage (V ) -V D S , D rain-to-S ource V oltage (V ) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7324D1 Power Mosfet Characteristics 1500 -V G S , G ate-to-S ource V oltage (V ) V GS C is s C rs s C oss = = = = 0V , f = 1M H z C gs + C gd , Cds S H O R TE D C gd C ds + C gd 10 I D = -2.2A V D S = -16V 8 C , C apacitanc e (pF ) C is s 1000 C oss C rs s 500 6 4 2 0 1 10 100 A 0 0 5 10 FO R TE S T C IR C U IT S E E FIG U R E 1 2 15 20 25 A -VD S , D rain-to-S ource V oltage (V ) Q G , Total G ate C harge (nC ) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 PDM 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7324D1 Schottky Diode Characteristics 10 100 10 TJ = 150C 125C Reverse Current - IR (mA) 1 100C 75C 50C 0.1 In sta n ta n e o u s F o rw a rd C u rre n t - I F (A ) 0.01 25C 0.001 0.0001 0 4 8 12 16 20 ) Reverse Voltage - V R (V) 1 T J = 1 5 0 C T J = 1 2 5 C T J = 2 5 C Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage 1000 Ju n ctio n C a p a cita n ce - C T (p F ) 100 TJ = 2 5 C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 F o rw a rd V o lta g e D ro p - V F M (V ) Fig. 12 -Typical Forward Voltage Drop Characteristics 10 0 5 10 15 20 A R e ve rse V o lta g e - V R (V ) Fig.14 - Typical Junction Capacitance Vs. Reverse Voltage 6 www.irf.com IRF7324D1 SO-8 Package Details D -B- D IM 5 IN C H E S M IN .05 32 .00 40 .01 4 .0 0 75 .1 8 9 .15 0 MAX .06 88 .00 98 .01 8 .0 09 8 .1 96 .15 7 M IL LIM E T E R S M IN 1 .3 5 0 .1 0 0 .3 6 0 .19 4 .80 3 .8 1 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99 A A1 B 5 8 E -A- 7 6 5 H 0.25 (.010) M AM 1 2 3 4 C D E e e1 H K e 6X e1 A K x 45 .05 0 B A S IC .02 5 B A S IC .2 2 84 .01 1 0 .16 0 .2 44 0 .01 9 .05 0 8 1.2 7 B A S IC 0 .6 35 B A S IC 5 .8 0 0 .2 8 0 .4 1 0 6.20 0 .48 1.27 8 -CB 8X 0.25 (.010) N O TE S : A1 M CASBS 0.10 (.004) L 8X 6 C 8X L R E C O M M E N D E D F O O TP R IN T 0.72 (.028 ) 8X 1. D IM E N S IO N IN G A N D TO LE R A N C IN G P E R A N S I Y 14.5M -1982. 2. C O N T R O LLIN G D IM E N S IO N : IN C H . 3. D IM E N S IO N S A R E S H O W N IN M ILLIM E TE R S (IN C H E S ). 4. O U TLIN E C O N F O R M S TO JE D E C O U TLIN E M S -012A A . 5 D IM E N S IO N D O E S N O T IN C LU D E M O LD P R O TR U S IO N S M O LD P R O TR U S IO N S N O T TO E XC E E D 0.25 (.006). 6 D IM E N S IO N S IS TH E LE N G TH O F LE A D F O R S O LD E R IN G TO A S U B S TR A TE .. 6.46 ( .255 ) 1.78 (.070) 8X 1.27 ( .050 ) 3X Part Marking (IRF7101 example ) www.irf.com 7 IRF7324D1 T E R M IN A L N U M B E R 1 Tape and Reel 12 .3 ( .48 4 ) 11 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N NOTES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.00 (12 .9 92 ) MAX. 14 .4 0 ( .5 66 ) 12 .4 0 ( .4 88 ) NO TES : 1. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 8 www.irf.com |
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